You are here : HOME > Semiconductor > Tips for Inquiry>

1. GENRAL WAFERS
PARAMETER

UNIT

SPECIFICATION
Material
Silicon, Quartz, Glass...
Growth method
CZ or FZ
Size/diameter
inch/mm
**
Orientation
(1-0-0), (1-1-0), or, (1-1-1)**

Type/dopant
1) P/Boron
2) N/Phosphorus, Arsenic, Antimony
3) No-doping, intrinsic
Grade
Prime, Test, or Dummy
Resistivity
Ohm-cm
**
Thickness
um
**
Finish
1) Single Side Polished
2) Double (both) Side Polished
Front Side
Etched, Polished
Back Side
Etched, Damaged, Polished
2. EPI WAFERS

 

EPI layer Thickness, Resistivity, Dopant
Substrate
Refer to the above spec
3. SOI, BONDED, SIMOX...
OVERALL wafer  
HANDLE wafer
Refer to the above spec
BURIED Oxide  
ACTIVE layer  

REMARKS: **: Variations, if necessary.

For other Spec: If you require other Spec than the one here in above,
please state in the inquiry form or Contact Us.

E-mail: elaine.lee@dooson-inc.co.kr
 
Home | About Us | Construction | Industrial | Semiconductor | Contact Us | Site Map
 
 
Copyright @2002 DOOSON Inc., All Rights Reserved.
Tel:(82-2)444-5375 Fax:(82-2)444-4104 Email